Title
Hot Carrier And Soft Breakdown Reliability For Rf Circuits
Abstract
RF circuit performance degradations due to hot carrier (HC) and soft breakdown (SBD) effects are studied with 0.16 urn CMOS technology. Two design techniques are proposed to reduce the HC and SBD effects on RF circuits. A low noise amplifier (LNA) and a voltage-controlled oscillator (VCO) are used to verify the design techniques that can be used to build more reliable RF circuits. © 2002 IEEE.
Publication Date
12-1-2002
Publication Title
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Number of Pages
243-246
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
84864675182 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84864675182
STARS Citation
Xiao, Enjun; Yuan, Jiann S.; and Yang, Hong, "Hot Carrier And Soft Breakdown Reliability For Rf Circuits" (2002). Scopus Export 2000s. 2265.
https://stars.library.ucf.edu/scopus2000/2265