Title
Implementation Of A Comprehensive And Robust Mosfet Model In Cadence Spice For Esd Applications
Keywords
Electrostatic discharge; Modeling; MOSFET; SPICE
Abstract
Electrostatic discharge (ESD) is a critical reliability concern for microchips. This paper presents a comprehensive computer-aided design tool for ESD applications. Specifically, the authors develop an improved and robust MOS model and implement such a model into the industry standard Cadence SPICE for ESD circuit simulation. The key components relevant to ESD in the MOS model are studied and the implementation procedure is discussed. Experimental data measured from the human body model tester are included in support of the model.
Publication Date
12-1-2002
Publication Title
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume
21
Issue
12
Number of Pages
1497-1502
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TCAD.2002.804379
Copyright Status
Unknown
Socpus ID
0036908623 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0036908623
STARS Citation
Gao, X. F.; Liou, J. J.; and Bernier, J., "Implementation Of A Comprehensive And Robust Mosfet Model In Cadence Spice For Esd Applications" (2002). Scopus Export 2000s. 2385.
https://stars.library.ucf.edu/scopus2000/2385