Title

A Physics-Based Model For The Substrate Resistance Of Mosfets

Keywords

Electrostatic discharge; Impact ionization; Modeling; MOSFETs; Substrate resistance

Abstract

A compact and accurate model for the substrate resistance is essential and critical for the characterization of MOSFET operation, particularly for the case of relatively large drain current and sizeable substrate current. This paper develops such a model taking into account the effects of device geometry, impact ionization, and conductivity modulation. Comparison of the present and existing models is given, and results obtained from device simulation are included in support of the model. © 2002 Published by the Elsevier Science Ltd.

Publication Date

6-1-2002

Publication Title

Solid-State Electronics

Volume

46

Issue

6

Number of Pages

853-857

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(01)00345-8

Socpus ID

0036604619 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0036604619

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