Title

Ultrafast X-Ray Measurement Of Laser Heating In Semiconductors: Parameters Determining The Melting Threshold

Abstract

The pulse-width dependence of thermal melting and ablation thresholds in germanium and gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths. The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting thresholds in different semiconductors. © 2001 The American Physical Society.

Publication Date

4-27-2001

Publication Title

Physical Review B - Condensed Matter and Materials Physics

Volume

63

Issue

19

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1103/PhysRevB.63.193306

Socpus ID

0034907657 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034907657

This document is currently not available here.

Share

COinS