Title

New Approach For Defining The Threshold Voltage Of Mosfets

Abstract

The threshold voltage of MOSFETs has traditionally been defined as the gate voltage required to cause the surface potential to be equal to twice the Fermi potential in the bulk of semiconductor. Such a definition, although widely used for modeling long-channel MOSFET's, becomes increasingly questionable for modern devices with diminishing channel lengths. In this paper a new approach is proposed which defines the threshold voltage based on the intersection of the two asymptotes of the surface potential for the depletion and strong inversion regions. The approach is tested in simulation environment for MOS devices having different channel lengths, oxide thicknesses, and substrate doping concentrations.

Publication Date

4-1-2001

Publication Title

IEEE Transactions on Electron Devices

Volume

48

Issue

4

Number of Pages

809-813

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.915731

Socpus ID

0035308164 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035308164

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