Title

An Improved Model For Substrate Current Of Submicron Mosfets

Keywords

Electrostatic discharge; Impact ionization; MOS device; Substrate current

Abstract

Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliability of MOSFET. This paper develops an improved and analytic model for such a current based on the length of and maximum electric field in the high-field region near the drain junction. The present model is compared against several existing substrate current models reported in the literature, and results from device simulation and measurements are also included in support of the model development. © 2002 Elsevier Science Ltd. All rights reserved.

Publication Date

1-1-2002

Publication Title

Solid-State Electronics

Volume

46

Issue

9

Number of Pages

1395-1398

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(02)00088-6

Socpus ID

0036721882 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0036721882

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