Title
Influence Of Polysilicon-Gate Depletion On The Subthreshold Behavior Of Submicron Mosfets
Abstract
Ion implantation, followed by annealing process, often leads to nonuniform doping and considerable depletion effect in the polysilicon gate of submicron MOS devices. Such an effect can alter notably the subthreshold characteristics and invalidate the conventional subthreshold current model. This paper studies the polysilicon-gate depletion effects on the subthreshold behavior based on results obtained from two-dimensional device simulation. An empirical expression is also suggested to describe the subthreshold current including the depletion effect. © 2002 Elsevier Science Ltd. All rights reserved.
Publication Date
1-1-2002
Publication Title
Microelectronics Reliability
Volume
42
Issue
3
Number of Pages
343-347
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/S0026-2714(01)00259-1
Copyright Status
Unknown
Socpus ID
0036496840 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0036496840
STARS Citation
Liou, Juin J.; Shireen, R.; and Ortiz-Conde, A., "Influence Of Polysilicon-Gate Depletion On The Subthreshold Behavior Of Submicron Mosfets" (2002). Scopus Export 2000s. 2870.
https://stars.library.ucf.edu/scopus2000/2870