Title

Electrical Studies On Amorphous Silicon Carbide Nitride Films

Abstract

Electrical studies on amorphous silicon carbide nitride films were presented. Thin films of silicon carbonitride were deposited through a radio frequency magnetron sputtering process using silicon carbide as target. Electrical resistivity and dielectric constants of the films were also measured as a function of N2Ar ratios. It was possible to change the N2/Ar ratios to yield various compositions of SiCxNy films during sputtering by varying the nitrogen content in the gas flow mixture.

Publication Date

1-1-2002

Publication Title

Journal of Materials Science Letters

Volume

21

Issue

1

Number of Pages

7-8

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1023/A:1014217906295

Socpus ID

0036206082 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0036206082

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