Title
A Procedure To Extract Mobility Degradation, Series Resistance And Threshold Voltage Of Soi Mosfets In The Saturation Region
Abstract
Parasitic series resistance and mobility degradation are two important parameters for modeling and circuit simulation of MOSFETs. We present a new method to extract these two parameters from the current-voltage characteristics of SOI MOSFETs biased in the saturation region. This method is based on an integration function which reduces errors associated with the extraction procedure. Measured data and simulation results of SOI MOSFETs are used to test and verify the present method.
Publication Date
1-1-2001
Publication Title
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume
2
Number of Pages
887-890
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/ICSICT.2001.982037
Copyright Status
Unknown
Socpus ID
84964529017 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84964529017
STARS Citation
Ortiz-Conde, A.; García Sánchez, F. J.; and Cerdeira, A., "A Procedure To Extract Mobility Degradation, Series Resistance And Threshold Voltage Of Soi Mosfets In The Saturation Region" (2001). Scopus Export 2000s. 334.
https://stars.library.ucf.edu/scopus2000/334