Title

Multilayer Silicon Cavity Mirrors For The Far-Infrared P-Ge Laser

Abstract

Multilayer mirrors capable of >99.9% reflectivity in the far infrared (70-200 μm wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 Ω cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 arc sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered. © 2005 Optical Society of America.

Publication Date

11-20-2005

Publication Title

Applied Optics

Volume

44

Issue

33

Number of Pages

7191-7195

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/AO.44.007191

Socpus ID

29144500279 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/29144500279

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