Title

Wavelength Selection For The Far-Infrared P-Ge Laser Using Etched Silicon Lamellar Gratings

Keywords

Germanium; Laser; Terahertz

Abstract

A lamellar mirror made from Si wafer by anisotropic chemical etching and coated with gold has been demonstrated as an intracavity wavelength selector for the far-infrared p-Ge laser. The etching process produces rectangular grooves with precisely predetermined depth and 100 nm surface smoothness. This lamellar-grating structure defines the resonant laser wavelength within the broad tuning range of the p-Ge laser. Single wavelength laser operation with this mirror has been demonstrated on the third-order resonance with an active cavity finesse of at least 0.09. © 2004 Elsevier Ltd. All rights reserved.

Publication Date

3-1-2005

Publication Title

Optics and Laser Technology

Volume

37

Issue

2

Number of Pages

87-91

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.optlastec.2004.02.011

Socpus ID

5444255091 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/5444255091

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