Title

Analysis And Modeling Of Lna Circuit Reliability

Keywords

Circuit reliability; Hot carrier; Low noise amplifier; MOSFETs; Oxide breakdown

Abstract

This paper systematically investigates the hot carrier (HC) and soft breakdown (SBD) effects on different low noise amplifier (LNA) circuit configurations. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally evaluated, the HC and SBD induced performance degradations of three LNA configurations are evaluated for 0.16 μm CMOS technology. The applications include BlueTooth and WirelessLAN systems. The analytical equations for noise figure are derived, and the degradation models are also obtained. This work can help LNA designers to design more reliable LNA circuits. © 2005 IEEE.

Publication Date

11-15-2005

Publication Title

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Number of Pages

69-72

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

27644543012 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/27644543012

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