Title

Hot Carrier And Soft Breakdown Effects On Lna Performance For Ultra Wideband Communications

Abstract

This paper systematically investigates the hot carrier (HC) and soft breakdown (SBD) effects on CMOS low noise amplifier (LNA) for the ultra wide-band (UWB) of 3.1 to 7 GHz. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally extracted, the HC and SBD induced performance degradations of the LNA for UWB are evaluated for 0.16 μm CMOS technology, including s-parameters, noise figure, and stability factor. This work can help RF designers to design more reliable LNA circuits for upcoming UWB applications. © 2005 Elsevier Ltd. All rights reserved.

Publication Date

9-1-2005

Publication Title

Microelectronics Reliability

Volume

45

Issue

9-11

Number of Pages

1382-1385

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2005.07.025

Socpus ID

24144465154 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/24144465154

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