Title

Dynamic Stress-Induced High-Frequency Noise Degradations In Nmosfets

Abstract

Device parameter shifts in nMOSFETs subject to inverter-like dynamic voltage stress are examined experimentally. Model equations to relate high-frequency noise to device parameters are given. Dynamic stress-induced degradations in high-frequency noise performance of 0.16 μm nMOSFETs are investigated. Good agreement between the analytical predictions and experimental data is obtained. Noise performance of a Gilbert mixer is evaluated using Cadence SpectreRF simulation with the measured device model parameters. © 2005 Elsevier Ltd. All rights reserved.

Publication Date

9-1-2005

Publication Title

Microelectronics Reliability

Volume

45

Issue

9-11

Number of Pages

1794-1799

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2005.07.096

Socpus ID

24144493102 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/24144493102

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