Title

Rf Reliability Subject To Dynamic Voltage Stress In Nmos Circuits

Keywords

Circuit reliability; Hot carriers; MOS devices; Power amplifiers; Soft breakdown; Stress

Abstract

NMOS transistor degradation due to dynamic stress was examined experimentally. The degradation in radio frequency performance, such as linearity and noise figure, are evaluated. A power amplifier is used as a circuit example to demonstrate the effect of dynamic stress on RF circuit performance. ©2005 IEEE.

Publication Date

12-15-2005

Publication Title

IEEE International Reliability Physics Symposium Proceedings

Number of Pages

431-434

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

28744441593 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/28744441593

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