Title
Laser Doping Of Germanium
Keywords
Germanium; Laser doping
Abstract
A direct-write pulsed Nd:yttrium-aluminum-garnet laser treatment in an aluminum-containing gas was applied to the polished surface of an undoped Ge wafer. After KOH etching to remove metallic aluminum deposited on the surface, secondary ion mass spectroscopy (SIMS) revealed ∼60-200 nm penetration for Al at a concentration of ∼10 17 cm -3. Atomic force microscopy showed that surface roughness is much less than the measured penetration depth. Laser doping of Ge is a potential low cost, selective-area, and compact method, compared with ion-implantation, for production of high current ohmic contacts in Ge and SiGe opto-electronic devices.
Publication Date
8-22-2005
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
5713
Number of Pages
67-73
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.585470
Copyright Status
Unknown
Socpus ID
23744511757 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/23744511757
STARS Citation
Mahaney, T. J.; Muravjov, A. V.; and Dolguikh, M. V., "Laser Doping Of Germanium" (2005). Scopus Export 2000s. 3795.
https://stars.library.ucf.edu/scopus2000/3795