Title
Room Temperature Hydrogen Gas Sensitivity Of Nanocrystalline-Doped Tin Oxide Sensor Incorporated Into Mems Device
Abstract
Nanocrystalline indium oxide (In 2O 3)-doped tin oxide (SnO 2) thin film sensor has been sol-gel dip-coated on a microelectromechanical systems (MEMS) device. The micro-sensor device is successfully utilized to sense ppm level H 2 at room temperature with high sensitivity. The chamber pressure has no pronounce effect on the room temperature H 2 sensitivity. © 2005 Materials Research Society.
Publication Date
6-20-2005
Publication Title
Materials Research Society Symposium Proceedings
Volume
828
Number of Pages
51-56
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
20344403294 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/20344403294
STARS Citation
Shukla, Satyajit; Agrawal, Rajnikant; and Ludwig, Lawrence, "Room Temperature Hydrogen Gas Sensitivity Of Nanocrystalline-Doped Tin Oxide Sensor Incorporated Into Mems Device" (2005). Scopus Export 2000s. 3912.
https://stars.library.ucf.edu/scopus2000/3912