Title
Effect Of Air-Pressure On Room Temperature Hydrogen Sensing Characteristics Of Nanocrystalline Doped Tin Oxide Mems-Based Sensor
Keywords
Air-pressure; Hydrogen; MEMS; Nanocrystalline; Sensor; Tin oxide
Abstract
Nanocrystalline indium oxide (In 2O 3)-doped tin oxide (SnO 2) thin film sensor has been sol-gel dipcoated on a microelectrochemical system (MEMS) device using a sol-gel dip-coating technique. Hydrogen (H 2) at ppm-level has been successfully detected at room temperature using the present MEMS-based sensor. The room temperature H 2 sensing characteristics (sensitivity, response and recovery time, and recovery rate) of the present MEMS-based sensor has been investigated as a function of air-pressure (50-600 Torr) with and without the ultraviolet (UV) radiation exposure. It has been demonstrated that, the concentration of the surface-adsorbed oxygen-ions (which is related to the sensor-resistance in air), the ppm-level H 2, and the oxygen (O 2) partial pressure are the three major factors, which determine the variation in the room temperature H 2 sensing characteristics of the present MEMS-based sensor as a function of air-pressure. Copyright © 2005 American Scientific Publishers All rights reserved.
Publication Date
12-1-2005
Publication Title
Journal of Nanoscience and Nanotechnology
Volume
5
Issue
11
Number of Pages
1864-1874
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1166/jnn.2005.429
Copyright Status
Unknown
Socpus ID
28644435755 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/28644435755
STARS Citation
Shukla, Satyajit; Ludwig, Lawrence; and Cho, Hyoung J., "Effect Of Air-Pressure On Room Temperature Hydrogen Sensing Characteristics Of Nanocrystalline Doped Tin Oxide Mems-Based Sensor" (2005). Scopus Export 2000s. 3486.
https://stars.library.ucf.edu/scopus2000/3486