Title
A Novel Theoretical Model For Semiconductor Oxide Gas Sensor
Abstract
A new constitutive equation for the gas sensitivity of n-type semiconductor oxide thin film gas sensor has been proposed here based on a single-crystal model. The derived constitutive equation shows the dependence of the gas sensitivity on various critical parameters such as nanocrystallite size, space-charge-layer thickness, reducing gas concentration, bulk charge-carrier-concentration, surface-density of states, oxygen-ion-vacancy concentration, operating temperature, and film thickness. The present theoretical model is applicable to all n-type semiconductor oxides gas sensors. © 2005 Materials Research Society.
Publication Date
6-20-2005
Publication Title
Materials Research Society Symposium Proceedings
Volume
828
Number of Pages
161-166
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
20344401052 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/20344401052
STARS Citation
Shukla, Satyajit and Seal, Sudipta, "A Novel Theoretical Model For Semiconductor Oxide Gas Sensor" (2005). Scopus Export 2000s. 3913.
https://stars.library.ucf.edu/scopus2000/3913