Title

Gate Oxide Breakdown On Nmosfet Cutoff Frequency And Breakdown Resistance

Keywords

Breakdown spot resistance; Cutoff frequency; Gate capacitance; Gate oxide breakdown; LC oscillator; nMOS transistors; Oscillation frequency

Abstract

Gate oxide breakdown effect on CMOS RF devices has been examined. The breakdown spot resistance and total gate capacitance of nMOS transistors decrease with stress. The analytical equation of cutoff frequency including the gate oxide break-down effect is derived. The impact of oxide breakdown on the performance of an LC oscillator is evaluated. The oscillation frequency of the LC oscillator increases with oxide breakdown. © 2005 IEEE.

Publication Date

6-1-2005

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

5

Issue

2

Number of Pages

282-288

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2005.847872

Socpus ID

23844458648 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/23844458648

This document is currently not available here.

Share

COinS