Title

Characteristics Of 6H-Silicon Carbide Pin Diodes Prototyping By Laser Doping

Keywords

Laser doping; Lattice defect; PIN diode; Silicon carbide

Abstract

Silicon carbide PIN diodes have been fabricated using a direct-write laser-doping technique that reduces defect generation compared to the conventional ion-implantation technique. Nitrogen and aluminum were successfully incorporated into SiC as n-type and p-type dopants, respectively. Rutherford backscattering studies were conducted to compare the lattice defect generation by the laser-doping and ion-implantation techniques. No amorphization was observed in laser-doped samples, eliminating the need for high-temperature annealing. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the PIN diodes were also investigated. The silicon carbide diodes are intended for high-temperature and high-voltage power electronics applications.

Publication Date

1-1-2005

Publication Title

Journal of Electronic Materials

Volume

34

Issue

4

Number of Pages

430-438

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/s11664-005-0123-4

Socpus ID

18144366242 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/18144366242

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