Title

Impact Of Temperature-Accelerated Voltage Stress On Pmos Rf Performance

Keywords

Breakdown (BD); Circuit simulation; Hot carriers (HCs); Modeling; Negative bias temperature instability (NBTI); Radio frequency (RF); Temperature-accelerated stress

Abstract

The thermal electrochemical analysis and modeling of negative bias temperature instability, oxide breakdown, and hot-carrier injection effects on metal-oxide-semiconductor devices are performed. The temperature-accelerated voltage stress has been examined experimentally. A subcircuit model aiming to evaluate the stress-induced degradation via simulation is developed. The measured and simulated performance for fresh and stressed devices at different temperatures is presented. The radio frequency performance degradation of a test circuit due to temperature-accelerated voltage stress is investigated.

Publication Date

12-1-2004

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

4

Issue

4

Number of Pages

664-669

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2004.841249

Socpus ID

13444259568 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/13444259568

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