Title

Rf Reliability Of Mosfets Subject To Electrical Stress

Abstract

The impact of gate and drain voltage stress on the analog performance of MOSFETs at RF frequencies was studied systematically. 0.16-μm NMOSFETs have been evaluated experimental to examine the RF performance metrics such as cutoff frequency, linearity, noise figure, and I f noise. A methodology is presented to study the reliability in MOSFETs subject to stress. Both circuit simulation and measurement data are employed to prove the finding and methodology. © 2004 IEEE.

Publication Date

12-1-2004

Publication Title

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volume

2

Number of Pages

816-819

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

21644477587 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/21644477587

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