Rf Reliability Of Mosfets Subject To Electrical Stress

Abstract

The impact of gate and drain voltage stress on the analog performance of MOSFETs at RF frequencies was studied systematically. 0.16-μm NMOSFETs have been evaluated experimental to examine the RF performance metrics such as cutoff frequency, linearity, noise figure, and I f noise. A methodology is presented to study the reliability in MOSFETs subject to stress. Both circuit simulation and measurement data are employed to prove the finding and methodology. © 2004 IEEE.

Publication Date

12-1-2004

Publication Title

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volume

2

Number of Pages

816-819

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

21644477587 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/21644477587

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