Title

Mosfet Linearity Performance Degradation Subject To Drain And Gate Voltage Stress

Keywords

Complementary metal-oxide-semiconductor (CMOS) mixers; Gate oxide breakdown (BD); Gilbert cell; Hot carriers (HCs); Linearity; Voltage stress; Volterra series

Abstract

Device parameters degradation of nonlinear elements subject to drain and gate voltage stress is examined experimentally. Analysis of metal-oxide-semiconductor field-effect transistor linearity degradation due to stress is given. Effects on radio frequency (RF) circuit linearity are investigated systematically through a SpectreRF simulation based on measured device data.

Publication Date

12-1-2004

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

4

Issue

4

Number of Pages

681-689

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2004.838407

Socpus ID

13444257633 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/13444257633

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