Title

A New Approach To Characterize And Predict Lifetime Of Deep-Submicron Nmos Devices

Keywords

Gate current; Lifetime model; MOS devices; Reliability; Substrate current

Abstract

Experimental results indicated that the widely used power-law model for lifetime estimation is inaccurate for deep submicron (< 0.25 μm) devices. It underestimates the lifetime for large substrate hot-carrier stressing. This observation is attributed to current components that do not induce device degradation, such as the gate tunneling current and base current of parasitic bipolar transistor, in substrate current and gate current. A better lifetime prediction method is proposed for the deep-submicron devices. © 2004 IEEE.

Publication Date

12-1-2004

Publication Title

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volume

2

Number of Pages

787-791

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

21644447646 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/21644447646

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