Title

Rf Circuit Performance Degradation Due To Soft Breakdown And Hot-Carrier Effect In Deep-Submicrometer Cmos Technology

Keywords

CMOS; Constant voltage stress; Hot carriers; Low-noise amplifier; Power amplifier; Scattering parameters; Soft breakdown

Abstract

A systematic study of RF circuit performance degradation subject to oxide soft breakdown (SBD) and hot-carrier (HC) stress is presented in this paper. DC and RF characteristics before and after stress are extracted from the experimental data. The effects of SBD and lie stress on s-parameters, cutoff frequency, third-order interception point, and noise parameters are examined. The performance drifts of gain, noise figure, linearity, and input matching of the RF low-noise amplifier are demonstrated by SpectreRF simulation results based on measured device data.

Publication Date

1-1-2001

Publication Title

IEEE Transactions on Microwave Theory and Techniques

Volume

49

Issue

9

Number of Pages

1546-1551

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/22.942565

Socpus ID

0035444824 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035444824

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