Title

Minority Electron Transport Anisotropy In P-Type AlXGa1-XN/Gan Superlattices

Keywords

Electron microscopy; Semiconductor materials; Superlattices

Abstract

The minority electron diffusion length, L, in Mg-doped molecular beam epitaxy (MBE) grown p-type AlxGa1-xN/GaN superlattices with aluminum content x = 0.1 and 0.2 was measured perpendicular and parallel to the superlattice planes by the electron beam induced current (EBIC) technique. A large anisotropy in the transport properties was observed with the effect varying from 1:3 to 1:6. We attribute an experimentally observed diffusion length anisotropy to minority electron scattering during transport across the potential barriers of the superlattice. Reference p-GaN samples were also investigated, and the diffusion length was observed to be isotropic in both metal-organic chemical vapor deposition (MOCVD) (L = 0.5 μm) and MBE (L = 0.27 μm) grown samples.

Publication Date

1-1-2001

Publication Title

IEEE Transactions on Electron Devices

Volume

48

Issue

3

Number of Pages

433-437

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.906432

Socpus ID

0035278798 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035278798

This document is currently not available here.

Share

COinS