Title

Electric Field-Induced Fabrication Of Microscopic Si-Based Optoelectronic Devices For 1.55 And 1.16 Μm Ir Electroluminescence

Keywords

Doping; Electromigration; Luminescence; Si:Li; Si:Li:Er

Abstract

We suggest an alternative technique for electroluminescent device fabrication, based on our earlier findings of electric field (E-field)-induced bipolar transistor creation in Si, doped with Li. An external electric field served to induce μm sized electroluminescent device structures in Si, that had been doped prior to E-field application, with Li, and Er via thermal in-diffusion. Such devices exhibit low temperature, near infrared (IR) electroluminescence at ∼ 1.16 and 1.55 μm, corresponding to transitions associated with Li and Er levels, respectively, in the forbidden gap. While Li also creates radiative recombination centers in Si, the Er-based IR radiation is the most desirable one. At the same time Li-doping is what makes E-field-induced p-n junction fabrication possible. © 2001 Elsevier Science B.V.

Publication Date

4-24-2001

Publication Title

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volume

81

Issue

1-3

Number of Pages

113-115

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0921-5107(00)00678-4

Socpus ID

0035942378 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035942378

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