Title

Investigations On Hardness Of Rf Sputter Deposited Sicn Thin Films

Keywords

Amorphous materials; Silicon carbide; Sputtering; XPS

Abstract

Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputtering system using a SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties of the SiCN films. Surface morphology of the films was characterized by using Atomic Force Microscope. X-ray Photoelectron Spectroscopy (XPS) data indicated that the chemical status is highly sensitive to the nitrogen ratios during sputtering. © 2003 Elsevier B.V. All rights reserved.

Publication Date

3-15-2004

Publication Title

Materials Science and Engineering A

Volume

368

Issue

1-2

Number of Pages

103-108

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.msea.2003.09.103

Socpus ID

1542317656 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/1542317656

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