Title

Heavy Ion Backscattering Spectrometry At The University Of Central Florida

Keywords

Ion beam analysis; Micro contamination; Silicon cleaning; Surface analysis; Time-of-flight; Trace-element analysis

Abstract

The need for increased sensitivity in the detection of metallic contamination, in microelectronics fabrication, led to the development of heavy ion backscattering spectrometry (HIBS). This technique, based on principles similar to those of Rutherford backscattering spectrometry, permits one to quantitatively detect heavy impurities, at a level below 1×1010 atoms/cm2, on the surface of an otherwise clean silicon substrate. The approach was developed at Sandia National Laboratories, in collaboration with SEMATECH member companies, and Vanderbilt University. Recently, the HIBS instrument was transferred to the Department of Physics of the University of Central Florida, with the purpose of continuing the development of this unique resource, and making it available to industrial and academic investigators. The instrument has been successfully returned to operation, and preliminary tests showed sensitivity levels similar to those obtained at Sandia. A program is being developed to further increase the sensitivity of the instrument, as well as to explore potential new applications. A progress report of these efforts is presented. © 2004 Elsevier B.V. All rights reserved.

Publication Date

6-1-2004

Publication Title

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volume

219-220

Issue

1-4

Number of Pages

358-363

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.nimb.2004.01.082

Socpus ID

2442553674 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/2442553674

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