Title

Laser Doping Of Silicon Carbon And Pin Diode Fabrication

Abstract

Direct write laser doping is used to fabricate a PIN diode in a semi-insulating 6H-SiC wafer comprised of a p-type zone in one surface and an n-type zone in the opposing surface separated by an insulating region. Ohmic and Schottky contacts ate fabricated by a laser metallization technique which converts silicon carbide to a conductive phase without the addition of metal. Trimethylaluminum (TMA) and nitrogen are the precursors used to laser dope p-type and n-type regions, respectively. Laser doping of nitrogen in silicon carbide epilayers and single crystal substrates increase the dopant concentration by two orders of magnitude and produce both deep (500-600nm) and shallow (50 nm) junctions, respectively. Laser-assisted effusion/diffusion is used to dope aluminum in silicon carbide wafers and a 150 nm ptype doped junction can be fabricated in semiinsulating 6H-SiC and n-doped 4H-SiC wafers. At a reverse bias of 40V, the leakage current density is 8.3x10-3 A/cm2. The leakage current density increases from 6.9x10-4 A/cm2 at 20°C to 1.3x10-2 A/cm2 at 300°C at reverse bias of 20V. The average dopant concentration in the p-region is calculated as 7.46 x1016 cm-3 and the Schottky barrier height formed by the p-type zone is 0.75 eV based on the CV characteristic. This laser-fabricated diode is intended for use in high-temperature, high-voltage and high-frequency switching and sensing applications.

Publication Date

1-1-2004

Publication Title

ICALEO 2004 - 23rd International Congress on Applications of Laser and Electro-Optics, Congress Proceedings

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.2351/1.5060324

Socpus ID

85088334397 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85088334397

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