Title

Laser Direct Write And Gas Immersion Laser Doping Fabrication Of Sic Diodes

Abstract

Laboratory prototype SiC diodes are fabricated using a combination of gas immersion laser doping (GILD) and laser direct write (LDW) in situ metallization in a commercial SiC wafer. Trimethylaluminum (TMA) and nitrogen are the precursors used to produce p-type and n-type SiC, respectively. Using these techniques, a 150 nm p-type doped junction is fabricated in semi-insulating 6H-SiC and n-doped 4H-SiC wafers. Ohmic contacts are created by laser direct metallization producing carbon rich conductive phases in these doped materials. Alternatively an excimer laser can be used to create silicon rich Schottky contacts. The geometry of the diodes can be vertical or planar to the wafer surface and the laser processes are thought to reduce defect densities in the irradiated areas. These laser-processed diodes are intended for use in high temperature, high voltage and high frequency switching and sensing applications.

Publication Date

1-1-2004

Publication Title

Materials Research Society Symposium Proceedings

Volume

815

Number of Pages

235-240

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1557/proc-815-j3.4

Socpus ID

12744272434 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/12744272434

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