Title
High Power Euvl Source Demonstration Of Tin-Doped Droplet Laser Plasma Generated By Industrial Solid State Lasers
Abstract
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and high conversion efficiency. This offers a viable path towards successful realization of EUV lithography for the next generation semiconductor devices. ©2007 Optical Society of America.
Publication Date
12-1-2007
Publication Title
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/QELS.2007.4431518
Copyright Status
Unknown
Socpus ID
51549108997 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/51549108997
STARS Citation
Takenoshita, K.; Schmid, T.; George, S. A.; Cunado, J.; and Richardson, M. C., "High Power Euvl Source Demonstration Of Tin-Doped Droplet Laser Plasma Generated By Industrial Solid State Lasers" (2007). Scopus Export 2000s. 6068.
https://stars.library.ucf.edu/scopus2000/6068