Title
Thin Gate Oxide Reliability Study Using Nano-Scaled Stress
Abstract
By taking advantages of small contact area of conductive atomic force microscopy (CAFM) and the powerful measurement capability of Agilent 4156C, we applied nano-scaled stresses to oxide samples and measured their breakdown characteristics. We report in this paper the application of nano-scaled stresses to thin gate oxide through CAFM probe tip for gate oxide reliability study including the post-breakdown current conduction of thin oxide, the bias-annealing effect on post-irradiated samples and the breakdown statistical distribution by using the CAFM in conjunction with the Agilent 4156C. © 2007 IEEE.
Publication Date
12-1-2007
Publication Title
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Number of Pages
37-40
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/EDSSC.2007.4450056
Copyright Status
Unknown
Socpus ID
43049159318 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/43049159318
STARS Citation
Wu, Y. L.; Hwang, C. Y.; Liang, C. H.; Lin, S. T.; and Liou, J. J., "Thin Gate Oxide Reliability Study Using Nano-Scaled Stress" (2007). Scopus Export 2000s. 6213.
https://stars.library.ucf.edu/scopus2000/6213