Title

Nanoscale Bias-Annealing Effect In Postirradiated Thin Silicon Dioxide Films Observed By Conductive Atomic Force Microscopy

Keywords

Atomic force microscopy; Bias annealing; Irradiation; MOS devices; Reliability

Abstract

This paper investigated the reliability of thin silicon dioxide (SiO 2) subjected to irradiation followed by stress, using conductive atomic force microscopy (C-AFM). The I-V characteristics of localized spots on thin oxide films were measured before and after Co60γ-ray irradiation. The oxide films were then subjected to a ramped voltage stress simultaneously during the I-V measurements. By taking advantage of a small contact area, we report for the first time the nanoscale postirradiation bias-annealing effect in thin SiO2 film using C-AFM. Based on the number of fluctuating current peaks appearing in the I-V curves of the pre- and posttreatment oxide films, as well as the calculated effective barrier height from the Fowler-Nordheim tunneling theory, we found that the trapped charge in the oxide films, but not the charge at the interface caused by Co 60γ-ray irradiation, can be effectively annealed out by a postirradiation ramped voltage. © 2007 IEEE.

Publication Date

6-1-2007

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

7

Issue

2

Number of Pages

351-355

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2007.901069

Socpus ID

34548236806 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34548236806

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