Title
Tunable Far-Ir Detectors/Filters Based On Plasmons In Two Dimensional Electron Gases In Ingaas/Inp Heterostructures
Keywords
2-deg; HEMT; Plasmon; Terahertz
Abstract
Plasmons can be generated with photons in the two dimensional electron gas (2-deg) of high electron mobility transistors (HEMTs). Because the plasmon frequency at a given wavevector depends on sheet charge density, a gate bias can tune the plasmon resonance. This effect allows a properly designed HEMT to be used as a voltage-tunable narrow-band detector or filter. This work reports on both the theory and design of such a device in the InP materials system and discusses its potential uses. By using a sub-micron grating to couple incident radiation to a high sheet charge 2-deg, a minimum detectible wavelength of roughly 26 microns is obtained. Fabrication issues, terahertz response, and tunability are discussed. Because of its small size, this novel device could find use in spaceborne remote sensing application.
Publication Date
12-1-2007
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
6678
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.729298
Copyright Status
Unknown
Socpus ID
42149117135 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/42149117135
STARS Citation
Buchwald, W. R.; Saxena, H.; and Peale, R. E., "Tunable Far-Ir Detectors/Filters Based On Plasmons In Two Dimensional Electron Gases In Ingaas/Inp Heterostructures" (2007). Scopus Export 2000s. 6221.
https://stars.library.ucf.edu/scopus2000/6221