Title

First Thz And Ir Characterization Of Nanometer-Scaled Antenna-Coupled Ingaas/Inp Schottky-Diode Detectors For Room Temperature Infrared Imaging

Keywords

Infrared rectification; Low-noise operation; Responsivity; Schottky diodes; Zero-bias detectors

Abstract

Nanometer high performance InP Schottky detectors are scaled to IR wavelengths. The increased cutoff frequency of the Schottky detector was accomplished by both reducing its capacitance to attofarad range and also by reducing the contact resistance. The Schottky detectors were fabricated on InGaAs/InP substrates with the doping level as high as 1 × 10 19 cm -2. The typical Schottky detector anode size was 0.1 × 1 μm 2. Planar broadband antennas were designed for LWIR wavelengths to couple the radiation into the nanometer size detector. Several different IR antenna designs were evaluated, including complimentary square spirals, bow ties and crossed dipoles. A 6 × 7 array of antenna-coupled Schottky detectors was characterized at DC, yielding a 20 KΩ zero-bias resistance and a responsivity of 6 A/W for the entire array. The arrays were characterized at 2.5 THz, as well as in the IR (3-5μm and 10.6 μm). The current results for polarization sensitivity confirm that an antenna-coupled mechanism is responsible for the measured responsivity with the highest value measured at the THz range.

Publication Date

11-5-2007

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

6542

Issue

I

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.718887

Socpus ID

35648952279 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/35648952279

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