Title
Ultra Sensitive Eras/Inalgaas Direct Detectors For Millimeter Wave And Thz Imaging Applications
Keywords
Direct detection; ErAs; InGaAs; Millimeter wave imager; Rectifier diode; Responsivity; Schottky diode; Sensitivity; W-band
Abstract
A new class of zero bias, room temperature ultra sensitive detectors have been introduced for detection of millimeter wave radiation. The detectors have been scaled to micron level and have shown record responsivity in three forms. A W-band waveguide detector was designed and measured to have 4500 V/W voltage responsivity. A planar antenna coupled detector was also evaluated with and measured a responsivity 16100 V-mm2/W from 75-110 GHz. Following a resonant impedance matching technique an on-wafer characterization have shown voltage responsivity to exceed 20,000 V/W. The result does not include the reflected power from the detector and have shown that these detectors could provide noise equivalent power (NEP) values in the 4×10-13 W/ √Hz level. © 2007 IEEE.
Publication Date
10-2-2007
Publication Title
IEEE MTT-S International Microwave Symposium Digest
Number of Pages
1367-1370
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/MWSYM.2007.380467
Copyright Status
Unknown
Socpus ID
34748878312 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/34748878312
STARS Citation
Kazemi, H.; Nagy, G.; Tran, L.; Grossman, E.; and Brown, E. R., "Ultra Sensitive Eras/Inalgaas Direct Detectors For Millimeter Wave And Thz Imaging Applications" (2007). Scopus Export 2000s. 6670.
https://stars.library.ucf.edu/scopus2000/6670