Title
Inter-Valence-Band Hot Hole Laser In Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures
Keywords
Far-Infrared; Gallium Arsenide; Germanium; Laser; TeraHertz
Abstract
This paper reviews, compares, and contrasts recent gain calculations for a laser concept in delta-doped p-Ge and p-GaAs. Gain is calculated using distribution functions, determined from Monte Carlo simulations, for hot holes in crossed electric and magnetic fields. The results suggest that Ge is the superior material when considering only the factor of optical gain, but the possibility of lasing in GaAs can take advantage of a wider range of growth opportunities. Copyright © 2007 American Scientific Publishers All rights reserved.
Publication Date
12-1-2007
Publication Title
Journal of Nanoelectronics and Optoelectronics
Volume
2
Issue
1
Number of Pages
51-57
Document Type
Review
Personal Identifier
scopus
DOI Link
https://doi.org/10.1166/jno.2007.004
Copyright Status
Unknown
Socpus ID
43049113494 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/43049113494
STARS Citation
Peale, R. E.; Dolguikh, M. V.; and Muravjov, A. V., "Inter-Valence-Band Hot Hole Laser In Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures" (2007). Scopus Export 2000s. 6285.
https://stars.library.ucf.edu/scopus2000/6285