Title

Inter-Valence-Band Hot Hole Laser In Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures

Keywords

Far-Infrared; Gallium Arsenide; Germanium; Laser; TeraHertz

Abstract

This paper reviews, compares, and contrasts recent gain calculations for a laser concept in delta-doped p-Ge and p-GaAs. Gain is calculated using distribution functions, determined from Monte Carlo simulations, for hot holes in crossed electric and magnetic fields. The results suggest that Ge is the superior material when considering only the factor of optical gain, but the possibility of lasing in GaAs can take advantage of a wider range of growth opportunities. Copyright © 2007 American Scientific Publishers All rights reserved.

Publication Date

12-1-2007

Publication Title

Journal of Nanoelectronics and Optoelectronics

Volume

2

Issue

1

Number of Pages

51-57

Document Type

Review

Personal Identifier

scopus

DOI Link

https://doi.org/10.1166/jno.2007.004

Socpus ID

43049113494 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/43049113494

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