Title

Amorphous-Sicbn-Based Metal-Semiconductor-Metal Photodetector For High-Temperature Applications

Keywords

High temperature; Metal-semiconductor-metal (MSM); Photodetector (PD); SiCBN

Abstract

A photodetector (PD) with metal-semiconductor-metal (MSM) structure has been developed using an amorphous SiCBN film. The amorphous SiCBN film was deposited on the silicon substrate using reactive RF magnetron sputtering. The optoelectronic performance of the SiCBN MSM devices has been examined through photocurrent measurements. Temperature effect, with respect to photocurrent ratios, has been studied. The detector sensitivity factor, which is determined through the PD current ratio, was greater than five at room temperature. Furthermore, the device showed an excellent current sensitivity factor that is greater than two even at a higher temperature of 200 °C. The improved performance of the device at higher temperatures could open avenues for high-temperature PD applications. © 2007 IEEE.

Publication Date

8-1-2007

Publication Title

IEEE Electron Device Letters

Volume

28

Issue

8

Number of Pages

713-715

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2007.902083

Socpus ID

34547739570 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34547739570

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