Title
Effect Of N2/Ar Gas Mixture Composition On The Chemistry Of Sicbn Thin Films Prepared By Rf Reactive Sputtering
Abstract
In this work we report the deposition and characterization of amorphous thin films of silicon boron carbon nitride (SiCBN). The SiCBN thin films were deposited in a radio frequency (rf) magnetron sputtering system using reactive cosputtering of silicon carbide (SiC) and boron nitride (BN) targets. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform SiCBN films can be produced using this technique. © 2007 The Electrochemical Society.
Publication Date
3-16-2007
Publication Title
Journal of the Electrochemical Society
Volume
154
Issue
4
Number of Pages
-
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1149/1.2433708
Copyright Status
Unknown
Socpus ID
33947100576 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/33947100576
STARS Citation
Vijayakumar, Arun; Todi, Ravi M.; and Sundaram, Kalpathy B., "Effect Of N2/Ar Gas Mixture Composition On The Chemistry Of Sicbn Thin Films Prepared By Rf Reactive Sputtering" (2007). Scopus Export 2000s. 6847.
https://stars.library.ucf.edu/scopus2000/6847