Title

Studies Of Minority Carrier Transport In Zno

Keywords

Cathodoluminescence; Electron irradiation; Minority carrier diffusion length; ZnO

Abstract

The temperature dependence of the minority carrier diffusion length and lifetime in bulk n-type ZnO was studied using Electron-Beam-Induced Current (EBIC) and cathodoluminescence (CL) techniques. The diffusion length was observed to increase exponentially over the temperature range from 25 to 125 {ring operator}C, yielding an activation energy of 45 ± 2 meV. A concomitant decrease of the cathodoluminescence intensity for the near-band-edge transition was also observed. The activation energy determined by optical measurements was 58 ± 7 meV. The larger minority carrier diffusion length and smaller luminescence intensity are attributed to the increased lifetime of non-equilibrium holes in the valence band at elevated temperatures. Carrier trapping on Li-related levels with activation energy 283 ± 9 meV is also addressed. © 2007 Elsevier Ltd. All rights reserved.

Publication Date

7-1-2007

Publication Title

Superlattices and Microstructures

Volume

42

Issue

1-6

Number of Pages

201-205

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.spmi.2007.04.030

Socpus ID

34548478366 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34548478366

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