Title

Studies Of Electron Trapping In Gan Doped With Carbon

Keywords

Luminescence; Nitrides; Scanning electron microscopy; Semiconductors

Abstract

Irradiation by the beam of the scanning electron microscope is shown to induce a systematic decay of the cathodoluminescence intensity in gallium nitride semiconductor doped with carbon. This decay is accompanied by increased electronic carrier diffusion length, indicating that electron irradiation results in the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energy for irradiation-induced effect of 210 meV. This observation is consistent with trapping of non-equilibrium electrons on deep, non-ionized carbon levels. © 2006 Elsevier B.V. All rights reserved.

Publication Date

3-26-2007

Publication Title

Thin Solid Films

Volume

515

Issue

10

Number of Pages

4365-4368

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.tsf.2006.07.102

Socpus ID

33847024413 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33847024413

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