Title

Electrical Characterization Of Isotype N-Zno/N-Gan Heterostructures

Abstract

Electrical properties of n-ZnO/n-GaN isotype heterostructures obtained by rf-sputtering of ZnO films on GaN layers grown by metal-organic vapour phase epitaxy are discussed. Current-voltage (I-V) characteristics of the n-ZnO/n-GaN diodes revealed highly rectifying behavior with forward and reverse current densities ∼1.42×102 A/cm2 and ∼2.4×10-4 A/cm2, respectively, at ±5 V. From the Arrhenius plot built using temperature dependent current-voltage characteristics (I-V-T) an activation energy 0.125 eV was derived for the reverse bias leakage current path, and 0.618±0.004 eV for the band offset from forward bias measurements. From electron-beam induced current measurements the minority carrier diffusion length in ZnO was estimated in the range 0.125-0.175 μm, depending on excitation conditions. The temperature dependent EBIC measurements yielded an activation energy of 0.462±0.073 V. © 2007 Materials Research Society.

Publication Date

6-29-2007

Publication Title

Materials Research Society Symposium Proceedings

Volume

957

Number of Pages

207-212

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

34250901540 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34250901540

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