Title
Current-Transport Mechanisms Of Isotype N-Zno/N-Gan Heterostructures
Keywords
Current-voltage characteristics; EBIC; GaN; Heterojunction; ZnO
Abstract
Electrical properties of n-ZnO/n-GaN isotype heterostructures prepared by rf-sputtering of ZnO films on GaN layers which in turn grown by metal-organic vapour phase epitaxy are discussed. Current-voltage (I-V) characteristics of the n-ZnO/n-GaN diodes exhibited highly rectifying characteristics with forward and reverse currents being ∼1.43×10-2 A/cm2 and ∼2.4×10-4 A/cm2, respectively, at ±5 V. From the Arrhenius plot built representing the temperature dependent current-voltage characteristics (I-V-T) an activation energy 0.125 eV was derived for the reverse bias leakage current path, and 0.62 eV for the band offset from forward bias measurements. From electron-beam induced current measurements and depending on excitation conditions the minority carrier diffusion length in ZnO was estimated in the range 0.125-0.175 μm,. The temperature dependent EBIC measurements yielded an activation energy of 0.462 ± 0.073 V.
Publication Date
5-24-2007
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
6474
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.706300
Copyright Status
Unknown
Socpus ID
34248650718 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/34248650718
STARS Citation
Alivov, Ya I.; Bo, X.; Fan, Q.; Akarca-Biyikli, S.; and Johnstone, D., "Current-Transport Mechanisms Of Isotype N-Zno/N-Gan Heterostructures" (2007). Scopus Export 2000s. 6731.
https://stars.library.ucf.edu/scopus2000/6731