Title

Reliability Study Of Ultrathin Oxide Films Subject To Irradiation-Then-Stress Treatment Using Conductive Atomic Force Microscopy

Abstract

In this work, we investigated the reliability of ultrathin silicon dioxide films subject to an irradiation-then-stress treatment using for the first time a conductive atomic force microscopy (AFM). We found that the conductive AFM gives accurate and reliable characterization of the pre- and post-treatment of oxide films. Based on the conductive AFM measured I-V curves, we concluded that the increased number of defects generated in the oxide bulk is the main mechanism contributing to the oxide degradation after the irradiation-then-stress treatment. © 2006 Elsevier Ltd. All rights reserved.

Publication Date

2-1-2007

Publication Title

Microelectronics Reliability

Volume

47

Issue

2-3

Number of Pages

419-421

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2006.05.014

Socpus ID

33846596226 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33846596226

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