Title
Hybrid Ii-Vi And Iii-V Compound Double Heterostructures And Their Properties
Keywords
Electroluminescence (EL); Gallium nitride (GaN); Heterostructures; Photoluminescence (PL); Scanning electron microscopy (SEM); Zinc oxide (ZnO)
Abstract
In this report, n-GaN/n-ZnO/p-GaN double heterostructures (DHs) were grown on sapphire substrate employing metal-organic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) methods. Scanning electron microscopy (SEM) employed in both secondary electron (SE) and cathodoluminescence (CL) modes revealed high crystal and optical quality of the DH layers, indicating no significant interdiffusion of constituent elements during growth. The diode structures were fabricated whose current-voltage characteristics revealed rectifying behavior with a leakage current 2.12 × 10 -5 A and a forward current 7.8 × 10 -2 A at 10 V bias, and with threshold and breakdown voltages of 3.2 and -11 V, respectively. Under forward bias, an intense electroluminescence (EL) was observed, the spectrum of which depended on the injection current. © Springer-Verlag 2007.
Publication Date
4-1-2007
Publication Title
Journal of Electronic Materials
Volume
36
Issue
4
Number of Pages
409-413
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1007/s11664-006-0061-9
Copyright Status
Unknown
Socpus ID
34249030684 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/34249030684
STARS Citation
Alivov, Y. I.; Özgür, Ü; Gu, X.; Liu, C.; and Moon, Y., "Hybrid Ii-Vi And Iii-V Compound Double Heterostructures And Their Properties" (2007). Scopus Export 2000s. 7074.
https://stars.library.ucf.edu/scopus2000/7074