Title

Hybrid Ii-Vi And Iii-V Compound Double Heterostructures And Their Properties

Keywords

Electroluminescence (EL); Gallium nitride (GaN); Heterostructures; Photoluminescence (PL); Scanning electron microscopy (SEM); Zinc oxide (ZnO)

Abstract

In this report, n-GaN/n-ZnO/p-GaN double heterostructures (DHs) were grown on sapphire substrate employing metal-organic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) methods. Scanning electron microscopy (SEM) employed in both secondary electron (SE) and cathodoluminescence (CL) modes revealed high crystal and optical quality of the DH layers, indicating no significant interdiffusion of constituent elements during growth. The diode structures were fabricated whose current-voltage characteristics revealed rectifying behavior with a leakage current 2.12 × 10 -5 A and a forward current 7.8 × 10 -2 A at 10 V bias, and with threshold and breakdown voltages of 3.2 and -11 V, respectively. Under forward bias, an intense electroluminescence (EL) was observed, the spectrum of which depended on the injection current. © Springer-Verlag 2007.

Publication Date

4-1-2007

Publication Title

Journal of Electronic Materials

Volume

36

Issue

4

Number of Pages

409-413

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/s11664-006-0061-9

Socpus ID

34249030684 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34249030684

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