Title
Toward High-Power Semiconductor Terahertz Laser
Abstract
Injection seeding can increase electric-to-optical conversion efficiency and output power of p-Ge lasers. Preliminary experimental results support the approach to the maximum theoretical limit of 10-100 W in the frequency range 1.5-4.2 THz. © 2006 Optical Society of America.
Publication Date
1-1-2007
Publication Title
Optics InfoBase Conference Papers
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1364/otst.2007.tud4
Copyright Status
Unknown
Socpus ID
85086612547 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85086612547
STARS Citation
Muravjov, A. V.; Peale, R. E.; Shastin, V. N.; Fredricksen, C. J.; and Edwards, O., "Toward High-Power Semiconductor Terahertz Laser" (2007). Scopus Export 2000s. 7111.
https://stars.library.ucf.edu/scopus2000/7111