Title

Cmos Device And Circuit Degradations Subject To Hfo2 Gate Breakdown And Transient Charge-Trapping Effect

Keywords

CMOS oscillators; Dielectric breakdown (BD); Fast transient charge effect; Leakage current; Low-noise amplifier (LNA); Reliability

Abstract

The gate leakage current of HfO2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier. © 2007 IEEE.

Publication Date

1-1-2007

Publication Title

IEEE Transactions on Electron Devices

Volume

54

Issue

1

Number of Pages

59-67

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2006.887517

Socpus ID

33846055313 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33846055313

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