Title
Evaluation Of Rf Capacitance Extraction For Ultrathin Ultraleaky Soi Mos Devices
Keywords
Capacitance measurement; Inversion oxide thickness; Leakage current; Radio frequency (RF); S-parameter
Abstract
This letter evaluates a radio-frequency (RF) method to extract the gate capacitance for SOI MOSFETs with ultrathin ultraleaky gate dielectrics. Conventional methods such as two-element and three-element methods using precision impedance analyzer were also compared. The RF method scans the RF capacitance data, assesses its lower and upper limits, and extracts the SOI gate capacitance accurately independent of gate oxide thickness. © 2007 IEEE.
Publication Date
1-1-2007
Publication Title
IEEE Electron Device Letters
Volume
28
Issue
1
Number of Pages
45-47
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/LED.2006.886413
Copyright Status
Unknown
Socpus ID
33846005856 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/33846005856
STARS Citation
Yu, Chuanzhao; Zhang, J.; Yuan, J. S.; Duan, F.; and Jayanarananan, S. K., "Evaluation Of Rf Capacitance Extraction For Ultrathin Ultraleaky Soi Mos Devices" (2007). Scopus Export 2000s. 7390.
https://stars.library.ucf.edu/scopus2000/7390