Title

Evaluation Of Rf Capacitance Extraction For Ultrathin Ultraleaky Soi Mos Devices

Keywords

Capacitance measurement; Inversion oxide thickness; Leakage current; Radio frequency (RF); S-parameter

Abstract

This letter evaluates a radio-frequency (RF) method to extract the gate capacitance for SOI MOSFETs with ultrathin ultraleaky gate dielectrics. Conventional methods such as two-element and three-element methods using precision impedance analyzer were also compared. The RF method scans the RF capacitance data, assesses its lower and upper limits, and extracts the SOI gate capacitance accurately independent of gate oxide thickness. © 2007 IEEE.

Publication Date

1-1-2007

Publication Title

IEEE Electron Device Letters

Volume

28

Issue

1

Number of Pages

45-47

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2006.886413

Socpus ID

33846005856 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33846005856

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